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Total Reflection
Types of Techniques
- Inductively coupled plasma-optical emission spectrometry (ICP-OES)
- UV-Vis spectroscopy
- X-Ray fluorescence (XRF)
- Atomic absorption spectroscopy (AAS)
- Time-Resolved Photoluminescence Spectroscopy (TRPL)
- X-Ray Photoelectron Spectroscopy (XPS)
- Auger Electron Spectroscopy (AES)
- Fourier Transform Infrared Spectroscopy (FTIR)
- Atomic Fluorescence Spectroscopy (AFS)
- Infrared (IR) spectroscopy
- Nuclear Magnetic Resonance Spectroscopy
- Time of Flight Secondary Ion Mass Spectrometry (Tof-SIMS)
- Spectrophotometer
- Mössbauer Spectroscopy
- ultra violet photoelectron spectroscopy
- Electron Paramagnetic Resonance (EPR)
- Glow Discharge Optical Emission Spectrometry
- X-ray Reflectivity (XRR)
- Total Reflection-TXRF
- Ion scattering spectroscopy (ISS)
- Rutherford Backscattering Spectrometry (RBS)
- ToF Elestic Recoil Detection
- Spectroscopic Ellipsometry
Total Reflection-TXRF
Total Reflection X-ray Fluorescence (TXRF) is a surface elemental analysis technique used for the ultra-trace analysis of particles, residues and impurities on smooth surfaces. It is an energy-dispersive X-ray fluorescence technique arranged in a special geometry that provides increased sensitivity and reduced spectral background compared to conventional XRF techniques.
In TXRF, an incident X-ray beam impinges on a polished flat sample carrier at an angle below the critical angle of external total reflection for X-rays. This results in the reflection of most of the excitation beam photons at the surface. The sample, which is a small residue deposited on the sample carrier, is seen as a very thin sample under a very small angle. Due to this configuration, the measured spectral background in TXRF is significantly lower than in conventional XRF, resulting in an increased signal-to-noise ratio.
The X-ray beam excites the atoms in the sample, causing them to emit characteristic X-ray fluorescence radiation. The fluorescence signal is then detected by an energy-dispersive solid-state detector, typically a silicon-lithium (Si(Li)) detector, mounted parallel to the sample carrier plane. The measured signal is sorted by amplitude (proportional to the energy of the X-rays) in a multi-channel analyzer, leading to an energy-dispersive spectrum, which allows for the identification and quantification of the elements present in the sample.
- Analysis of surface contaminants on aircraft components
- Elemental analysis of aerospace coatings and materials
- Characterization of aerospace alloys and composites
- Analysis of surface contaminants on automotive parts and components
- Elemental analysis of automotive coatings and paints
- Characterization of automotive alloys and materials
- Analysis of surface contaminants in chemical processes
- Elemental analysis of chemical products and byproducts
- Characterization of catalysts and adsorbents
- Analysis of surface contaminants on electronic components
- Elemental analysis of printed circuit boards and electronic materials
- Characterization of semiconductor materials and devices
- Analysis of surface contaminants on military equipment and components
- Elemental analysis of defence coatings and materials
- Characterization of defence alloys and composites
- Analysis of surface contaminants in energy production processes
- Elemental analysis of energy materials and components
- Characterization of catalysts and adsorbents in energy applications
- Elemental analysis of trace evidence in forensic investigations
- Characterization of materials in legal disputes and investigations
- Analysis of surface contaminants on lighting components
- Elemental analysis of lighting materials and coatings
- Characterization of semiconductor materials in lighting applications
- Analysis of surface contaminants on medical devices and implants
- Elemental analysis of medical device coatings and materials
- Characterization of biocompatible materials and alloys
- Analysis of surface contaminants in pharmaceutical processes
- Elemental analysis of pharmaceutical products and ingredients
- Characterization of pharmaceutical excipients and packaging materials
- Elemental analysis of raw materials in various industries
- Characterization of mineral and ore samples
- Analysis of surface contaminants in raw material processing
- Analysis of surface contaminants on semiconductor wafers
- Elemental analysis of semiconductor materials and coatings
- Characterization of semiconductor devices and components
- Analysis of surface contaminants on telecommunication components
- Elemental analysis of data storage materials and coatings
- Characterization of materials used in telecommunications and data storage
- Trace element analysis with high sensitivity
- Survey analysis capability
- Quantitative analysis
- Non-destructive technique
- Automated analysis for high throughput
- Whole wafer analysis (up to 300 mm)
- Compatibility with various substrates (Si, SiC, GaAs, InP, sapphire, glass)
TXRF is typically performed on solid samples in the form of very fine powders or thin film depositions. The sample quantity required can vary depending on the specific application and instrument setup, but generally, a few milligrams of sample is sufficient. For liquid or solution samples, a droplet of a few microliters is typically deposited on a sample plate and dried to form a thin, flat surface for analysis.