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Rutherford Backscattering Spectrometry
Types of Techniques
- Inductively coupled plasma-optical emission spectrometry (ICP-OES)
- UV-Vis spectroscopy
- X-Ray fluorescence (XRF)
- Atomic absorption spectroscopy (AAS)
- Time-Resolved Photoluminescence Spectroscopy (TRPL)
- X-Ray Photoelectron Spectroscopy (XPS)
- Auger Electron Spectroscopy (AES)
- Fourier Transform Infrared Spectroscopy (FTIR)
- Atomic Fluorescence Spectroscopy (AFS)
- Infrared (IR) spectroscopy
- Nuclear Magnetic Resonance Spectroscopy
- Time of Flight Secondary Ion Mass Spectrometry (Tof-SIMS)
- Spectrophotometer
- Mössbauer Spectroscopy
- ultra violet photoelectron spectroscopy
- Electron Paramagnetic Resonance (EPR)
- Glow Discharge Optical Emission Spectrometry
- X-ray Reflectivity (XRR)
- Total Reflection-TXRF
- Ion scattering spectroscopy (ISS)
- Rutherford Backscattering Spectrometry (RBS)
- ToF Elestic Recoil Detection
- Spectroscopic Ellipsometry
Rutherford Backscattering Spectrometry (RBS)
Rutherford Backscattering Spectrometry (RBS) is an ion scattering technique used for compositional thin film analysis. It is unique in that it allows quantification without the use of reference standards. During an RBS analysis, high-energy (MeV) He2+ ions (i.e., alpha particles) are directed onto the sample, and the energy distribution and yield of the backscattered He2+ ions at a given angle are measured. Since the backscattering cross section for each element is known, it is possible to obtain a quantitative compositional depth profile from the RBS spectrum obtained for films that are less than 1 μm thick.
The working principle of RBS involves the interaction between high-energy ions and the sample. The ions are accelerated to high energies and directed onto the sample. The energy distribution and yield of the backscattered ions at a given angle are measured. The backscattering cross section for each element is known, which allows for the determination of the compositional depth profile. The technique is particularly useful for analyzing thin films, as it can provide information on the elemental composition and thickness of the film. Additionally, RBS can be used to obtain information on the crystalline quality of single crystal samples through the use of “channelling” techniques.
- Characterization of aerospace coatings and thin films
- Analysis of aerospace composites and materials
- Evaluation of automotive coatings and paints
- Characterization of catalytic converter materials
- Analysis of fuel cell components
- Characterization of chemical vapor deposition (CVD) coatings
- Analysis of corrosion-resistant coatings and films
- Evaluation of catalyst materials
- Characterization of thin-film coatings on electronic components
- Analysis of semiconductor materials and devices
- Evaluation of display panel coatings and materials
- Characterization of protective coatings and materials
- Analysis of armor and shielding materials
- Evaluation of explosive material coatings
- Characterization of solar cell materials and coatings
- Analysis of battery electrode materials
- Evaluation of nuclear fuel cladding materials
- Characterization of biocompatible coatings and films
- Analysis of implant materials
- Evaluation of drug delivery systems
- Characterization of drug coatings and controlled-release films
- Analysis of pharmaceutical packaging materials
- Evaluation of tablet coatings and films
- Characterization of semiconductor materials and devices
- Analysis of thin-film coatings on semiconductor components
- Evaluation of integrated circuit materials
- Characterization of thin-film coatings on data storage devices
- Analysis of optical fiber coatings and materials
- Evaluation of telecommunication equipment coatings
- Non-destructive compositional analysis
- Quantitative without standards
- Conductor and insulator analysis
- Hydrogen measurements (in HFS mode)
- Low-Z element sensitivity (in NRA mode)
- Sample size: 1-2 mm
- Sample volume: 1-2 mm³