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Auger Electron Spectroscopy
Types of Techniques
- Inductively coupled plasma-optical emission spectrometry (ICP-OES)
- UV-Vis spectroscopy
- X-Ray fluorescence (XRF)
- Atomic absorption spectroscopy (AAS)
- Time-Resolved Photoluminescence Spectroscopy (TRPL)
- X-Ray Photoelectron Spectroscopy (XPS)
- Auger Electron Spectroscopy (AES)
- Fourier Transform Infrared Spectroscopy (FTIR)
- Atomic Fluorescence Spectroscopy (AFS)
- Infrared (IR) spectroscopy
- Nuclear Magnetic Resonance Spectroscopy
- Time of Flight Secondary Ion Mass Spectrometry (Tof-SIMS)
- Spectrophotometer
- Mössbauer Spectroscopy
- ultra violet photoelectron spectroscopy
- Electron Paramagnetic Resonance (EPR)
- Glow Discharge Optical Emission Spectrometry
- X-ray Reflectivity (XRR)
- Total Reflection-TXRF
- Ion scattering spectroscopy (ISS)
- Rutherford Backscattering Spectrometry (RBS)
- ToF Elestic Recoil Detection
- Spectroscopic Ellipsometry
Auger Electron Spectroscopy (AES)
Auger Electron Spectroscopy (AES) is a surface analysis technique that unveils the elemental makeup and chemical state of a material’s outermost atomic layers. It achieves this by directing a high-energy electron beam towards the sample surface. This bombardment excites electrons within the atoms, causing them to jump to higher energy levels. To return to a stable state, these excited electrons can relax in two main ways:
- X-Ray Emission : This scenario involves the excited electron emitting an X-ray photon. However, this process isn’t relevant for AES.
- Auger Electron Emission : In the more relevant pathway for AES, the excited electron can transfer its energy to another inner-shell electron, ejecting it from the atom. This ejected electron is called an Auger electron.
The key lies in the energy of the emitted Auger electron. This energy is characteristic of the element it originated from and the specific atomic orbital involved in the transition. By measuring the kinetic energy of these Auger electrons with an electron energy analyzer, AES can identify the elements present on the surface, even at minute concentrations.
AES relies on the phenomenon of Auger electron emission. Here’s a breakdown of this process:
- Electron Beam Bombardment : A high-energy electron beam strikes the sample surface, exciting electrons within the atoms.
- Inner-Shell Vacancy Creation : An excited electron jumps to a higher energy level, leaving a vacancy in its original inner shell.
- Auger Electron Emission : An outer-shell electron fills the inner-shell vacancy, but instead of simply emitting a photon, it transfers its excess energy to another outer-shell electron. This second outer-shell electron is ejected from the atom as an Auger electron.
The energy of the emitted Auger electron is unique to the element it originated from and the specific electron transitions involved. By analyzing these energies, AES can not only determine the elemental composition of the surface but also glean information about the chemical environment surrounding the emitting atom. This additional information is due to the slight variations in Auger electron energy depending on the neighbouring atoms and their bonding configurations.
- Failure analysis of composite materials used in aircraft construction.
- Identification of contaminant species on spacecraft components for performance and safety assurance.
- Surface characterization of lubricants and coatings to optimize performance and durability.
- Analysis of adhesive bonding to ensure strong and reliable connections.
- Characterization of catalysts to understand their activity and selectivity.
- Investigation of surface segregation phenomena to optimize material properties.
- Analysis of organic contaminants on electronic components for improved device reliability.
- Depth profiling of thin films in microelectronics for precise control of device functionality.
- Characterization of military coatings to ensure their effectiveness against corrosion and wear.
- Trace evidence analysis in forensic investigations for material identification.
- Evaluation of battery electrode materials to enhance energy storage capacity and efficiency.
- Analysis of corrosion products in energy infrastructure for preventative maintenance.
- Failure analysis in forensic investigations to pinpoint the root cause of material failure.
- Identification of trace materials on questioned documents for material origin determination.
- Quality control of surface finishes and coatings.
- Identification of impurities and contaminants affecting product performance.
- Biocompatibility testing of implants to ensure minimal rejection by the body.
- Analysis of surface modifications for targeted drug delivery.
- Analysis of dopant profiles and interfaces within transistors for precise control of device behaviour.
- Characterization of gate dielectrics, critical components in transistors, for optimal performance.
- Analysis of thin film coatings in magnetic recording media to ensure data integrity.
- Characterization of surface contaminants on optical components for high-fidelity data transmission.
- High surface sensitivity (top few atomic layers)
- Excellent lateral resolution (down to nanometers)
- Quantitative analysis capability
- Elemental composition determination
- Chemical state information
- Solid samples (metals, semiconductors, ceramics, polymers, etc.)
- Conductive or non-conductive samples (insulating samples require charge compensation)
- Ultra-high vacuum (UHV) environment is required
- Maximum sample size (2 cm x 1cm).
- Sample height -(1.2 cm).
- The minimum area of analysis is 0.3 µm.
- The sample must be conductive.Samples must be high vacuum compatible (<1x10-9 Torr).